maximum ratings rating symbol v alue unit collectorCemitter voltage v ceo 140 vdc collectorCbase voltage v cbo 160 vdc emitterCbase voltage v ebo 6.0 vdc collector current continuous i c 600 madc thermal characteristics characteristic symbol ma x unit total device dissipation frC 5 board, (1) p d 225 mw t a = 25c derate above 25c 1.8 mw/c thermal resistance, junction to ambient r ja 556 c/w total device dissipation p d 300 mw alumina substrate, (2) t a = 25c derate above 25c 2.4 mw/c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j ,t stg C55 to +150 c electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min max unit off characteristics collectorCemitter breakdown voltage(3) (br)ceo vdc (i c = 1.0 madc, i b = 0) 160 collectorCbase breakdown voltage (br)cbo vdc (i c = 100 adc, i e = 0) 180 emitterCbase breakdown voltage (br)ebo vdc (i e = 10 adc, i c = 0) 6.0 collector cutoff current i cbo ( v cb = 120vdc, i e = 0) 50 nadc ( v cb = 120vdc, i e = 0, t a =100 c) 50 adc emitter cutoff current i ebo 50 nadc ( v be = 4.0vdc, i c = 0) 1. frC5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. pulse test: pulse width = 300 s, duty cycle = 2.0%. feature ? device marking and ordering information device marking shipping g1 3000/tape&reel dual npn small signal surface 1 3 2 sot-363/sc-88 6 4 5 e 2 b 2 e 1 c 2 b 1 c 1 m mbt5551dw1t1 mount transistor v v v compliance with rohs requirements. we declare that the material of product 2012- 0 willas electronic corp. MMBT5551DW1T1
electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics dc current gain h fe CC (i c = 1.0 madc, v ce = 5.0 vdc) 80 (i c = 10 madc, v ce = 5.0 vdc) 80 250 (i c = 50 madc, v ce = 5.0vdc) 30 collectorCemitter saturation voltage v ce(sat) vdc (i c = 10 madc, i b = 1.0 madc) 0.15 (i c = 50 madc, i b = 5.0 madc ) 0.20 baseCemitter saturation voltage v be(sat) vdc (i c = 10 madc, i b = 1.0 madc) 1.0 (i c = 50 madc, i b = 5.0 madc) 1.0 2012- 0 willas electronic corp. dual npn small signal surface mount transistor MMBT5551DW1T1
v ce = 1.0 v v ce = 5.0 v i c , collector current (ma) figure 15. dc current gain h fe , dc current gain (normalized) t j = +125c +25c C55c 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 500 300 200 100 50 30 20 10 7.0 5.0 i b , base current (ma) figure 16. collector saturation region v be , baseCemitter voltage (volts) figure 3. collector cut?off region i c , collector current (ma) figure 4. ?on? voltages v ce , collector emitter voltage (volts) i c , collector current ( a) v, voltage (volts) C0.4 C0.3 C0.2 C0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 10 1 10 0 10 C1 10 C2 10 C3 10 C4 10 C5 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 1.0 0.8 0.6 0.4 0.2 0 i c = 1.0 ma t j = 25c 10 ma 30 ma 100 ma 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 1.0 0.8 0.6 0.4 0.2 0 v ce = 30 v t j = 125c 75c 25c i c = i ces reverse forward t j = 25c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 2012- 0 willas electronic corp. dual npn small signal surface mount transistor MMBT5551DW1T1
c obo c, capacitance (pf) 10.2 v v in 10 ms input pulse v bb r b 5.1 k 0.25 mf v in 1n914 v out r c v cc 30 v 3.0 k t r , t f < 10 ns duty cycle = 1.0% t, time (ns) values shown are for i c @ 10 ma figure 6. switching time test circuit i c , collector current (ma) figure 5. temperature coefficients v r , reverse voltage (volts) figure 7. capacitances figure i c , collector current (ma) 8. turn?on time i c , collector current (ma) figure 9. turn?off time t, time (ns) v , temperature coefficient (mv/c) t j = 25c i c /i b = 10 t j = 25c t r @ v cc = 120 v t r @ v cc = 30 v t d @ v eb(off) = 1.0 v v cc = 120 v i c /i b = 10 t j = 25c t f @ v cc = 120 v t f @ v cc = 30 v t s @ v cc = 120 v vc for v ce(sat) vb for v be(sat) t j = C55c to +135c 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 2.5 2 1.5 1.0 0.5 0 C0.5 C1.0 C1.5 C2.0 C2.5 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 c ibo 0.2 0.3 0.7 0.5 1.0 2.0 3.0 5.0 7.0 1 0 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 1000 500 300 200 100 50 30 20 10 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 5000 3000 2000 1000 500 300 200 100 50 100 C8.8 v 100 2012- 0 willas electronic corp. dual npn small signal surface mount transistor MMBT5551DW1T1
xx m xx = specific device code m = date code generic marking diagram* 1 6 xx 1 6 m or 2012- 0 willas electronic corp. dual npn small signal surface mount transistor MMBT5551DW1T1 sot - 363 dimensions in inches and (millimeters) .056(1.40) .047(1.20) .071(1.80) .004(0.10)min. .010(0.25) .003(0.08) .043(1.10) .032(0.80) .016(0.40) .004(0.10) .004(0.10)max. .087(2.20) .071(1.80) .054(1.35) .045(1.15) .021(0.55) .030(0.75) .096(2.45)
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